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Ofelia Plads, Kvæsthusbroen, København, Danmark — photo by — @kaspercph

Ferroelectric RAM vs. MRAM

What oppositional advantages and disadvantages are there?

FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.

The advantages of FeRam

FeRAM’s advantages over Flash include:

  • Faster write performance.
  • A much greater maximum read/write endurance
  • FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures).

The disadvantages

  • Much lower storage densities than flash devices, storage capacity limitations and higher cost.
  • Like DRAM, FeRAM’s read process is destructive, necessitating a write-after-read architecture.

Cypress F-RAM


Why Replace a Ferroelectric RAM with an MRAM?

Magnetoresistive RAM (MRAM)

Magnetoresistive RAM is inherently non-volatile, has unlimited endurance with no known wear-out mechanism and is not subject to data loss at higher temperature operating conditions.

  • Immediate (<1ns) Power-off with no loss of data.
  • Unlimited read and write cycle endurance.
  • Truly Asynchronous SRAM compatible speeds and cycle times.
  • 20-Year data retention with no cycling dependence.
  • No wear-out concerns.”

Written by

AI Policy and Ethics at Student at University of Copenhagen MSc in Social Data Science. All views are my own.

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